K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.
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The words k9f2g0u0m than those to be programmed do not need to be loaded. Only the Read Status command and Reset command are valid while programming is in progress. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis.
Month Sales Transactions. The said additional block failure rate does not include those reclaimed blocks. AC Waveforms for Power Transition 1. Any undefined command inputs are prohibited except for above command set of Table 1. Its NAND cell provides the most cost- effective solution for the solid state mass storage market.
Margin,quality,low-cost products with low minimum orders. K9f2g08j0m reset command FFh is written at Ready state, the device goes into Busy for maximum 5us.
Functional operation should be restricted to the conditions as detailed in the operational k9f2g08u0, of this data sheet. Serial access may be done after power-on without latency. Auto-page read function is enabled only when PRE pin is tied to Vcc.
K9F2G08U0M datasheet, Pinout ,application circuits M X 8 Bit / M X 16 Bit NAND Flash Memory
Minimum DC voltage is When the next set of data is inputted with the Cache Program command, tCBSY is affected by the progress of pending internal programming.
The program performance may be dramatically improved by cache program when there are lots of pages of data to be programmed.
Five read cycles sequentially output the manufacturer code EChand the device code and XXh, 4th cycle ID, 50h respectively. A NAND structure consists of 32 cells. Recent History What is this?
Rp VCC ibusy 1. For this reason, two bit ECC is recommended for copy-back operation. Commands, address and data are latched on the rising edge of the WE pulse. Dataheet transitions, this level may undershoot to At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify.
Since the invalid block information is also erasable in most cases, it is impossible to recover the information once it has been erased. Additional invalid blocks may develop while being used.
(PDF) K9F2G08U0M Datasheet download
Data in the data page can be read out at 50ns 30ns, only X8 device cycle time per byte or word X16 device. The memory array consists of separately erasable K-byte X8 device or 64K-word X16 device blocks.
Once the command is latched, it does not need to be written for the following page read operation. Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed into memory cell. The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
In Block Erase operation, however, only the three row address cycles are used. Data input cycle for modifying a portion or multiple distant portions of the source page is allowed as shown in Figure We will also never share your payment details with your seller. The command register remains in Status Read mode until further commands are issued to it.
K9F2G08U0M Datasheet pdf – FLASH MEMORY – Samsung Electronic
Cycle 00h 00h 90h FFh 80h 80h 85h 60h 85h 05h 70h 2nd. If the device is already in reset state a new reset command will be accepted by the command register. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access would provide significant savings in power consumption. The following possible failure modes should be considered to implement a highly reliable system.
When you place an order, your payment is made to SeekIC and not to your seller. Its NAND cell provides the most costeffective solution for the solid state mass storage market.
The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 4 times for main array X8 device: An invalid block s does not affect the performance of valid block s because it is isolated from the bit line and the common source line by a select transistor. Data 1 Data 64 Ex. Page Read and Page Program need the same five address cycles following the required command input.
K9F2G08U0M Datasheet PDF
The number of valid blocks is presented with both cases of invalid blocks considered. Total 1, NAND cells reside in a block.
The repetitive high datasjeet low transitions of the RE clock make k9f22g08u0m device output the data starting from the selected column address up to the last column address. The addressing should be done in sequential order in a block. The device supports random data input in a page.
The device embodies power-on auto-read feature which enables serial datasheet of data of the 1st page without command and address input after power-on. A recovery time of minimum 10? Because program status fail during a page program does not affect the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced block.