This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical. BSIM and IC simulation. Circuit simulation and compact models. BSIM – the beginning. BSIM3 – a compact model based on new MOSFET physics. : BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology).

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Physical description xix, p. Channel DC current and output resistance.

BSIM4 and MOSFET Modeling For IC Simulation – Semantic Scholar

Fringing and overlap capacitances. World Scientific Publishing Co. Series International series on advances in solid state electronics and technology. Source and drain mosfeet a transistor with multiple gate fingers.

BSIM4 and MOSFET Modeling For IC Simulation

Noise representations and parameters. Composite stamps for transient NQS model. Responsibility Weidong Liu, Chenming Hu.


Available to subscribing institutions. Time discretization, equation linearization and matrix stamping.

Source and drain area and perimeter calculation. BSIM – the beginning. Nielsen Book Data Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

Gate direct-tunneling current theory and model. BSIM4 diode charge and capacitance [4]. Find it at other libraries via WorldCat Limited preview. Introduction and chapter objectives. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits.

Describe the connection issue. Junction diode IV and CV models. Gate and channel geometries and materials. ISBN electronic bk. Skip to search Skip to main content.

BSIM4 and MOSFET modeling for IC simulation – CERN Document Server

Source and drain contact scenarios and diffusion resistances. BSIM4 flicker noise models. SearchWorks Catalog Stanford Libraries. Gate direct-tunneling and body currents. Connections of a multi-transistor stack. dor


The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device simulatiom in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Charge and capacitance models. BSIM4 – aimed for nm down to 20nm nodes. The intent of this book ch. BSIM4 channel thermal noise models.

Source and drain parasitics: Circuit simulation and compact models. Diode temperature-dependence model [4]. Gate intrinsic-input resistance for non-quasi-static modeling.

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